Thyristor / Diode Modules

1.Thyristor / Diode Modules. 2,GPP chips with Vacuum sintering technology. 3.Cross to semikron SKKT,SKKH,SKKD,SKNH series.

Features Heat transfer through aluminium nitride ceramic isolated metal baseplate Precious metal pressure contacts for high reliability Thyristor with amplifying gate Typical Applications DC motor control (e. G. For machine tools) AC motor starters Temperature control (e. G. For ovens, chemical processes) Professional light dimming (studios, theaters)

V RSM	V RRM , V DRM	I TRMS = 420 A (maximum value for continuous operation)
V	V	I TAV = 250 A (sin. 180; T c = 85 °C)
900	800	SKKT 250/08E
1300	1200	SKKT 250/12E	SKKH 250/12E
1700	1600	SKKT 250/16E	SKKH 250/16E
1900	1800	SKKT 250/18E	SKKH 250/18E

Symbol	Conditions	Values	Units
I TAV	sin. 180; T c = 85 (100) °C;	250 ( 178 )	A
I D	P16/200F; T a = 35 °C; B2/B6	450 / 585	A
I RMS	P16/200F; T a = 35 °C; W1 / W3	566 / 3 * 471	A
I TSM	T vj = 25 °C; 10 ms	9000	A
	T vj = 130 °C; 10 ms	8000	A
i²t	T vj = 25 °C; 8,3 ... 10 ms	405000	A²s
	T vj = 130 °C; 8,3 ... 10 ms	320000	A²s
V T	T vj = 25 °C; I T = 750 A	max. 1,4	V
V T(TO)	T vj = 130 °C	max. 0,925	V
r T	T vj = 130 °C	max. 0,45	mOhm
I DD ; I RD	T vj = 130 °C; V RD = V RRM ; V DD = V DRM	max. 50	mA
t gd	T vj = 25 °C; I G = 1 A; di G /dt = 1 A/µs	1	µs
t gr	V D = 0,67 * V DRM	2	µs
(di/dt) cr	T vj = 130 °C	max. 250	A/µs
(dv/dt) cr	T vj = 130 °C	max. 1000	V/µs
t q	T vj = 130 °C ,	50 ... 150	µs
I H	T vj = 25 °C; typ. / max.	150 / 500	mA
I L	T vj = 25 °C; R G = 33 Ohm; typ. / max.	300 / 2000	mA
V GT	T vj = 25 °C; d.c.	min. 3

Thyristor / Diode Modules